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TOSHIBA

TOSHIBAIGBT is short for Insulated Gate Bipolar Transistor. It is a power transistor with a MOS structure for an input part and a bipolar one for an output part. Suitable for high voltage and high current, it is capable of controlling high power with less drive power. Its applications include induction heating cooking equipment.
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Toshiba IGBT Modules
GT 8 Q 101
GT 15 Q 101
GT 25 Q 101
GT 50 J 101
GT 50 J 102
GT 60 M 301
MG 8 N6 ES42
MG 8 Q6 ES42
MG 8 Q6 ES1
MIG 10 J 902H
MG 15 G1 AL3
MG 15 Q 6 ES 1
MG 15 Q 6 ES42
....
Toshiba Mosfet & IPM
-- MOSFET --
MG 15 G4 GM1

-- IPM --
MIG 15 J 805H
MIG 15 Q 901H
Toshiba Darlington
MG 10 G 6 ELI
MG 15 G 6 ELI
MG 15 N 6 EKI
MG 20 Q 6 EKI
MG 20 G6 EL1/ 2
MIG 20 J 103H
MIG 20 J 901
MIG 20 J 902H
MIG 25 Q 901H
MIG 25 Q 906H
MG 25 J2 YS9
MG 25 M 1 BKI
....
Toshiba Diode
30 Q6 P42
100 U 6 P41
110 Q2 G43

TOSHIBA DIODE
3 Phrase Diode
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