Specification :

BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 NPN TRANSISTOR
a73 MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT
NEGATIVE BASE DRIVE
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
(version " P ")
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 350 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 250 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 10 V
IC Collector Current 60 A
I
CM
Collector Peak Current (t
p
= 10 ms) 80 A
IB Base Current 16 A
P
tot
Total Dissipation at T
c
¡Ü 25
o
C 350 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
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