2SC2098 C2098 - SILICON NPN EPITAXIAL PLANAR - Toshiba Semiconductor
IRFP460 - N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET - IR
2SK1277 K1277 - N-Channel MOS-FET( 250V, 0.12Ohm, 30A, 150W) - Fuji Electric
2SC3694 C3694 - Silicon NPN Power Transistors - NEC
2SK1358 K1358 - FET, Silicon N Channel MOS Type( for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) - Toshiba Semiconductor
BUP307 - IGBT With Antiparallel Diode ( Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) - Siemens Semiconductor Group
BU408 - POWER TRANSISTORS ( 7A, 150-200V, 60W)
2SK1278 K1278 TRANSISTOR - N-channel MOS-FET - Fuji Electric
SPW17N80C3 17N80C3 - CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/ dt rated - Infineon Technologies AG
S2512NH 800V V[ drm] Max., 25A I[ T] Max. Silicon Controlled Rectifier. ST
2SC2078 C2078 - 27MHz RF Power Amp Applications - Sanyo Semicon Device
2SK2057 K2057 - Field Effect Transistor Silicon N Channel MOS Type - Toshiba Semiconductor
2SK1938 K1938 TRANSISTOR - Power MOSFET - Fuji Electric
G4C50W IRG4PC50WPBF - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier
HGTG20N60C3D - 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode - Fairchild Semiconductor