BUZ11 - N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET - STMicroelectronics
2SA814 A814 - SILICON PNP EPITAXIAL BASE MESA TYPE - Toshiba Semiconductor
BUF420 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR - STMicroelectronics
MUR860 MUR860G U860 Power Rectifiers - ON
SI-3052P 3052P - 3-Terminal, Dropper Type - Sanken electric
2SK1940 K1940 POWER TRANSISTOR - N-channel MOS-FET - Fuji Electric
2SK1522 K1522 - Silicon N-Channel MOS FET - Hitachi Semiconductor
VN0300, Supertex, Inc. N-Channel Enhancement-Mode Vertical DMOS FETs
2SK385 K385 POWER MOSFET TRANSISTOR - TOSHIBA
2SC3979 C3979 - Silicon NPN triple diffusion planar type( For high breakdown voltage high-speed switching)
IRF9530N - Power MOSFET( Vdss= -100V, Rds( on) = 0.20ohm, Id= -14A) - International Rectifier
KT15N14 - TSS KT Series - Shindengen Electric Mfg.Co.Ltd
2SD1410A D1410A - NPN TRIPLE DIFFUSED TYPE ( IGNITER, HIGH VOLTAGE SWITCHING APPLICATIONS) - Toshiba Semiconductor
STP55NE06 P55NE06 - N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET - STMicroelectronics
2SD560 D560 - NPN SILICON EPITAXIAL TRANSISTOR ( DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING - PMC